研究方向

本课题组致力于探索新型电子信息材料在维度效应调控下,其因电子结构改变而产生的新奇的物理性质,并关注构筑高性能功能器件的界面问题。课题组成员擅长材料制备及微纳电学手段,目前关注以下几个研究方向:

1.高迁移率及高k电子材料的开发及低功耗器件;

2. 二维单晶薄膜化学气相沉积(CVD)方法学;

3.  二维异质结堆叠及器件构筑方法学;

4. 拓扑绝缘体及电磁输运测量。


课题组预招收2024级申请考核制博士生1名。

个人简历

2005.09-2008.06 江西省余江县第一中学,化学竞赛决赛银牌;

2008.09-2012.06 贝斯特bst3344化学学院化学专业,获得理学学士学位;

2012.09-2017.06 北京大学化学与分子工程学院物理化学专业,获得理学博士学位(导师:彭海琳教授、刘忠范院士)

2017.07-2019.06 北京大学博士后,入选“博新计划”(合作导师:彭海琳教授、张锦院士),获BMS首位出站特优资助;

2019.09-至今  贝斯特bst3344特聘研究员、博士生导师、课题组长。


  吴金雄研究员擅长半导体薄膜的合成、表征、微纳加工及电磁输运测量。近年来,以第一作者或者通讯作者身份,在国际著名期刊Nature Nanotechnology, Science Advances, Nature Communications, JACS, Nano Lett., Advanced Materials, ACS Nano等上发表论文多篇。  在研究经费方面,目前吴金雄研究员主持国家自然科学基金委重大培育项目1项(81万),北京分子科学国家研究中心开放课题1项(50万)、贝斯特bst3344百名青年学术带头人启动经费(200万)等。


   目前,课题组具备一整套完整的材料生长、微纳加工及表征手段,包括高端化学气相沉积系统、半导体参数测试仪-探针台、高低温真空探针台、热蒸镀、磁控溅射、电子束蒸镀、原子层沉积、聚焦离子束电子束双束系统FIB/EBL, FEI helios 5 CX)、激光直写光刻、原子力显微镜(Bruker icon)、无液氦综合物性测量系统(PPMS Dynacool 9T)等大型仪器设备。 课题组研究条件优渥,学生无需出课题组即可完成材料生长、微纳加工及低温电磁输运测量一整套流程,且所有大型仪器均自己亲自操作。


课题组在读成员:

博士生:张磊(2020级),董欣月(2020级),陈家彪(2021级,直博),艾威(2022级,硕博),何育彧(2022级,硕),吕尊贤(2023级)。

硕士生:王兵(2021级),徐凌云(2021级),刘召超(2022级),陈婉莹(2023级),杨明健(2023级)


毕业生及去向:

张哲山(2023年博士毕业,中芯国际);高战胜(2023年博士毕业,河南大学讲师)


诚挚欢迎对“电子信息材料及器件”等研究方向感兴趣的本科生、研究生、博士后进入课题组交流与学习。

代表性成果


独立工作后:


22.   Meng, K#.; Huang, J.*; Wu, J.*; Yuan H.*, et al. Gate-tunable  Berry curvature in van der Waals Itinerant Ferromagnetic Cr7Te8. InfoMat, 2024, accepted.

21.  Dong, X; Wu, J.*; Fu, H.*, Yan, B.*, et al. Exploring the high dielectric performance of Bi2SeO5: from bulk to bilayer and monolayer. Science China Materials, 2024, accepted. 

20.  Ai, W#, Fu, H. X*, Luo, F*, Deng, M. X.*, Wu, J.*, et al. Observation of giant room-temperature anisotropic magnetoresistance in  the topological insulator beta-Ag2Te. Nature Communications, 2024, accepted.

19. Zhang, L#, He, Y.#, Zhou, Z*, Luo, F*, Wu, J.*, et al. Controlled synthesis of a high-mobility Bi3O2.5Se2 semiconductor by oxidatioin of Bi2Se3 for fast and highly sensitive photodetectors. Laser Photonics & Reviews, 2023, 2300854.

18. Chen, J., Wu, J.*, et alVertically grown ultrathin Bi2SiO5 as ultrahigh-κ single-crystalline gate dielectric. Nature Communications, 2023, 14, 4406 (Feature article).

17. He, Y., Zhou, Z.*, Wu, J.*, et al. The discovery of a high-mobility two-dimensional bismuth oxyselenide semiconductor and its application in nonvolatile neuromophic device. ACS Nano, 2023, 17, 10783.

16.  Zhang, Z#; Dong, X#;  Du, Y.*, Fu, H.*, Luo, F.*,,Wu, J.*,et alTransferred polymer-encapsulated metal electrodes for electrical transport measurements on ultrathin air-sensitive crystals. Small Methods2023, 2300177.

15. Zhang, L#; Fu. X.*; Yuan H.*,Wu, J.*,et alTemperature-driven reversible structural transformation and conductivity switching in ultrathin Cu9S5 crystals. Nano Research, 2023, 16,10515.

14. Ai, W.; Wu, J.*, et al. High mobility and quantum oscillations in semiconducting Bi2O2Te nanosheets grown by chemical vapor deposition. Nano Letters2022, 18, 7659.

13. Gao, Z.; Wu, J.*Luo, F.*, et alLarge and Tunable Magnetoresistance in Cr1-xTe/Al2O3/Cr1-xTe Vertical Spin Valve Device. Advanced Electronic Materials, 2022, 9,  2200823.

12. Zhang, Z#; Dong, X#; Fu, H.*; Du, Y.*,Wu, J.*,et alFerromagnetic Order in Semiconducting Cr-doped a-MnTe Nanosheets Grown by Chemical Vapor Deposition. Advanced Electronic Materials, 2022:2200451.

11. Gao, Z.; Yuan, H.*; Wu, J.*Luo, F.*, et al. Near room-temperature ferromagnetism in air-stable two-dimensional Cr1-xTe grown by chemical vapor deposition. Nano Research, 2022, 15,3763.

10. Zhang, C.;Wu, J.* Peng, H.*, et al. High-mobility flexible oxyselenide thin-film transistors prepared by solution- assisted  method. J. Am. Chem. Soc., 2020, 142, 6, 2726.



独立工作前:


9.  Wu, J.; Peng, H.*et al. High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi2O2Se. Nature  Nanotechnology, 2017,12, 530.

8.  Chen, C. #; Wang, M. #Wu, J. #, Peng, H.*, Chen, Y. L.*,et al. Electronic Structures and unusually robust bandgap in an ultrahigh-mobility layered oxide semiconductor, Bi2O2SeScience Advances, 2018, 4, eaat8355 (Co-first author).

7. Yin, J. #; Tan Z. #; Hong H. #Wu, J. #, Liu, K.*, Peng, H.*et al. Ultrafast, highly-sensitive infrared photodetectors based on two-dimensional Bi2O2Se crystal. Nature Communications, 2018, 9, 3311 (Co-first author).

6.Wu, J.; Peng, H.*et al. Chemical patterning of high-mobility semiconducting 2D Bi2O2Se crystals for integrated optoelectronic devices. Advanced Materials, 2017291704060.

5. Wu, J.; Peng, H. *et al. Controlled synthesis of high-mobility atomically thin bismuth oxyselenide crystals. Nano Letters, 2017, 17, 3021.

4. Wu, J.; Peng, H.*, et al. Low residual carrier concentration and high mobility in 2D semiconducting Bi2O2Se,  Nano Letters, 2019, 19, 197.                                    

3. Fu, H#.; Wu, J.#et al. Self-modulation doping effect in the high-mobility layered semiconductor Bi2O2Se. Physical  Review B2018, 97, 241203 (Co-first author).

2.  Wu, J.; Liu, Z.*; Peng, H.*, Fluorescence quenching effect of rhodanmine 6G on two-dimensional Bi2Se3 crystals. Acta Chimica Sinica, 2015, 73, 944.

1. Wu, J.; Li, N.*et al. Fluorine-free crystallization of triclinic AlPO4-34. Crysengcomm2012,14, 8671.